We have studied p-type and n-type doping of ZnO thin films and nanowires.
Publications
- “Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires”, A. B. Yankovich, B. Puchala, Fei Wang, Jung-Hun Seo, D. Morgan, Xudong Wang, Z. Ma, A. V. Kvit, and P. M. Voyles Nano Letters 12, 1311-1316 (2012).
- “Donor behavior of Sb in ZnO” H.Y. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P.M. Voyles, and H. Morkoç, J. Appl. Phys. 112, 033706 (2012).
- “Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy” H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. B. Yankovich, A.V. Kvit, P. M. Voyles, and H. Morkoç, J. Appl. Phys. 111, 103713 (2012).
- “InGaN based Light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN”, H.Y. Liu, X. Li, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A.B. Yankovich, A.V. Kvit, P.M. Voyles, and H. Morkoç, Phys. Stat. Sol. C 8, 1548-1551 (2011); doi: 10.1002/pssc.201000860