Papers

Many of these publications are also available on our Mendeley page.

  1. Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling spin polarization” Gui-fang Li, Yusuke Honda, Hong-xi Liu, Ken-ichi Matsuda, Masashi Arita, Tetsuya Uemura, and Masafumi Yamamoto, Yoshio Miura, Masafumi Shirai, Toshiaki Saito, Fengyuan Shi and P. M. Voyles, Phys. Rev. B 89, 014428 (2014).
  2. Stabilization by Atomic Layer Deposition of Copper Catalysts for Liquid Phase Reactions” Brandon J. O’Neill, David H. K. Jackson, Anthony J. Crisci, Carrie A. Farberow, Fengyuan Shi, Ana C. Alba Rubio, Junling Lu, Paul J. Dietrich, Xiangkui Gu, Christopher L. Marshall, Peter C. Stair, Jeffrey W. Elam, Jeffrey T. Miller, Fabio H. Ribeiro, Paul M. Voyles, Jeffrey Greeley, Manos Mavrikakis, Susannah L. Scott, Thomas F. Kuech, and James A. Dumesic Angewandte Chemie International Edition 52, 13808-13812 (2013).
  3. Multiple Morphologies of Gold-Magnetite Hybrid Nanoparticles are Effectively Functionalized with Protein for Cell Targeting” E. S. Krystofiak, E. C. Mattson, P. M. Voyles, C. J. Hirschmugl, R. M. Albrecht, M. Gajdardziska-Josifovska, J. A. Oliver Microsc. Microanal. 19, 821-834 (2013).
  4. Fast flexible electronics with strained silicon nanomembranes” H. Zhou, J.-H. Seo, D. M. Paskiewicz, Y. Zhu, G. K. Celler, P. M. Voyles, W. Zhou, M. G. Lagally, Z. Ma, Scientific Reports 3, 1291 (2013).
  5. Growth and Magnetic Properties of (CoxFe1-x)4N Film on Si(001) Substrate” H. Xiang, F.-Y. Shi, M. S. Rzchowski, and P. M. Voyles, Appl. Phys. A 110, 497-492 (2013).
  6. Inelastic and Elastic Mean Free Paths from FIB Samples of Metallic Glasses”, D.T. Schweiss, Jinwoo Hwang, and P.M. Voyles, Ultramicroscopy 124, 6 (2013).
  7. Impurity Distribution and Microstructure of Ga-doped ZnO Films Grown by Molecular Beam Epitaxy” A.V. Kvit, A. B. Yankovich, V. Avrutin, H. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P. M. Voyles, J. Appl. Phys 112, 123527 (2012).
  8. Fluctuation Electron Microscopy” Jinwoo Hwang and P. M. Voyles, in Characterization of Materials, E. N. Kaufmann, ed., Wiley (2012).
  9. Analytical and computational modeling of fluctuation electron microscopy from a nanocrystal/amorphous composite”, Feng Yi and P. M. Voyles, Ultramicroscopy 122, 37 (2012).
  10. Donor behavior of Sb in ZnO” H.Y. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P.M. Voyles, and H. Morkoç, J. Appl. Phys. 112, 033706 (2012).
  11. Nanoscale structure and structural relaxation in Zr50Cu45Al5 bulk metallic glass” Jinwoo Hwang, Z. H. Melgarejo, Y. E. Kalay, I. Kalay, M. J. Kramer, D. S. Stone, and P. M. Voyles Phys. Rev. Lett. 108, 195505 (2012); commentary in Physics 5, 54 (2012).
  12. Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma-enhanced molecular beam epitaxy” H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. B. Yankovich, A.V. Kvit, P. M. Voyles, and H. Morkoç, J. Appl. Phys. 111, 103713 (2012).
  13. Stable p-type conduction from Sb-decorated head-to-head basal plane inversion domain boundaries in ZnO nanowires”, A. B. Yankovich, B. Puchala, Fei Wang, Jung-Hun Seo, D. Morgan, Xudong Wang, Z. Ma, A. V. Kvit, and P. M. Voyles Nano Letters 12, 1311-1316 (2012).
  14. Bifunctional Materials for the Catalytic Conversion of Cellulose into Soluble Renewable Biorefinery Feedstocks”, Damian Reyes-Luyanda, Josseant Flores-Cruz, Pedro J. Morales-Pérez, Luis G. Encarnación-Gómez, Fengyuan Shi, Paul M. Voyles, and Nelson Cardona-Martínez, Topics in Catalysis, 55, 148 (2012).
  15. Fe3O4 at CoFe/AlOx/CoFe interfaces in a nominally symmetric inverse TMR junction by STEM-EELS”, Fengyuan Shi, Hua Xiang, J. Joshua Yang, M.S. Rzchowski, Y. A. Chang and P. M. Voyles, J. Magn. Magn. Mat. 324, 1837 (2012).
  16. Behavior of Pt atoms on oxide supports during reduction treatments at elevated temperatures, characterized by aberration corrected STEM imaging” S. A. Bradley, W. Sinkler, D. A Blom, W. Bigelow, P. M. Voyles, and L. F Allard, Catalysis Letters 142, 176 (2012).
  17. Hexagonal-Based Pyramid Void Defects in GaN and InGaN”, A.B. Yankovich, A.V. Kvit, X. Li, F. Zhang, V. Avrutin, H.Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles J. Appl. Phys. 111, 023517 (2012)
  18.  “Local Chemical and Topological Order in Al-Tb and Its Role in Controlling Nanocrystal Formation” Y.E. Kalay, I. Kalay, Jinwoo Hwang, P.M. Voyles, and M.J. Kramer, Acta Mat. 60, 994 (2012).
  19. Nanometer Scale Atomic Structure of Zirconium Based Bulk Metallic Glass, Jinwoo Hwang, dissertation, Materials Science, University of Wisconsin, Madison 2011
  20. Medium Range Order in Al-based Metallic Glasses, Feng Yi, dissertation, Materials Science, University of Wisconsin, Madison 2011
  21. High-field properties of carbon-doped MgB2 thin films by hybrid physical–chemical vapor deposition using different carbon sources” W. Dai, V. Ferrando, A. V. Pogrebnyakov, R. H. T. Wilke, K. Chen, X. Weng, J. Redwing, C. W. Bark, C.-B. Eom, Y. Zhu, P. M. Voyles, D. Rickel, J. B. Betts, C. H. Mielke, A. Gurevich, D. C. Larbalestier, Q. Li, and X. X. Xi, Superconductor Science and Technology 24, 125014 (2011).
  22. Synthesis of Fe3O4 thin films by selective oxidation with controlled oxygen chemical potential” H. Xiang, F.-Y. Shi, C. Zhang, M. S. Rzchowski, P. M. Voyles, and Y. A. Chang Scripta Materialia 65, 739 (2011).
  23. Effect of Sample Thickness, Energy Filtering, and Probe Coherence on Fluctuation Electron Microscopy Experiments”, Feng Yi and P. M. Voyles, Ultramicroscopy 111, 1375 (2011).
  24. MgB2 / MgO / MgB2 Josephson Junctions for High-Speed Circuits”, K. Chen, C. G. Zhuang, Q. Li, X. Weng, J. M. Redwing, Y. Zhu, P. M. Voyles, X. X. Xi, IEEE Transaction on Applied Superconductivity 21, 115-118 (2011).
  25. InGaN based Light emitting diodes utilizing Ga doped ZnO as a highly transparent contact to p-GaN”, H.Y. Liu, X. Li, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A.B. Yankovich, A.V. Kvit, P.M. Voyles, and H. Morkoç, Phys. Stat. Sol. C 8, 1548-1551 (2011); doi: 10.1002/pssc.201000860
  26. Epitaxial Growth and Thermal Stability of Fe4N Film on TiN Buffered Si(001) Substrate” H. Xiang, F.-Y. Shi, M.S. Rzchowski, P.M. Voyles, and Y.A. Chang, J. Appl. Phys., 109, 07E126 (2011).
  27. “Variable resolution fluctuation electron microscopy on Cu-Zr metallic glass using a wide range of coherent STEM probe size”, Jinwoo Hwang and P. M. Voyles, Microsc. Microanal. 17, 67 (2011).
  28. “Fluctuation Microscopy in the STEM”, Paul M. Voyles, Stephanie Bogle, and John R. Abelson, in STEM: Imaging and Analysis, Springer (to be published), S. J. Pennycook and P. D. Nellist, eds.
  29. Flexible formation of coherent probes on an aberration-corrected STEM with three condensers” Feng Yi, P. Tiemeijer and P. M. Voyles, J. Elec. Microsc. 59 (Supplement) S15-S21 (2010).
  30. Epitaxial Growth and Magnetic Properties of Fe3O4 Films on TiN Buffered Si (001) (110) and (111) Substrates”, H. Xiang, F.-Y. Shi, M. S. Rzchowski, P. M. Voyles and Y. A. Chang, Appl. Phys. Lett. 97, 092508 (2010).
  31. Size analysis of nanoscale order in amorphous materials by variable-resolution fluctuation electron microscopy” S. N. Bogle, L. N. Nittala, R. D. Twesten, P. M. Voyles, J. R. Abelson, Ultramicroscopy 1101273-1278 (2010).
  32. Nanoscale disorder in pure and doped MgB2 thin films,” Y. Zhu, A. V. Pogrebnyakov, R. H. Wilke, K. Chen, X. X. Xi, J. M. Redwing, C. G. Zhuang, Q. R. Feng, Z. Z. Gan, R. K. Singh, Y. Shen, N. Newman, J. M. Rowell, F. Hunte, J. Jaroszynski, D. C. Larbalestier, S. A. Baily, F. F. Balakirev, P. M. Voyles, Supercon. Sci. Tech. 23, 095008 (2010).
  33. High-Jc MgB2 Josephson junctions with operating temperature up to 40 K”, Ke Chen, C. G. Zhuang, Qi Li, Y. Zhu, P. M. Voyles, X. Weng, J. M. Redwing, R. K. Singh, A. W. Kleinsasser, and X. X. Xi, Appl. Phys. Lett. 96, 042506 (2010).
  34. MgO platelets and high critical field in MgB2 thin films doped with carbon from methane” Y. Zhu, F. Hunte, S. A. Baily, F. F. Balakirev, C. G. Zhuang, Q. R. Feng, Z. Z. Gan, X. X. Xi, D. C. Larbalestier, P. M. Voyles, Supercon. Sci. Tech. 22, 125001 (2009).
  35. “Effect of growth conditions on structural and electrical properties of Ga-doped ZnO films grown by plasma-assisted MBE” V. Avrutin, H.Y. Liu, N. Izyumskaya, M.A. Reshchikov, Ü. Özgür, A.V. Kvit, P.M. Voyles, and H. Morkoç, in Zinc Oxide and Related Materials — 2009, S. Durbin, M. Allen, and H. von Wenckstern, eds., Mater. Res. Soc. Symp. Proc. Vol. 1201, 1201-H05-20 (2009)
  36. Reverse Monte Carlo structural model for a zirconium-based metallic glass incorporating fluctuation microscopy medium-range order data“, Jinwoo Hwang, A. C. Clausen, Hongbo Cao, P. M. Voyles, J. Mat. Res. 24, 3121 (2009).
  37. “MnxZn1-xFe2-yRyO4 (R=Gd, Eu) ferrite nanocrystals for magnetocaloric applications”, E. Calderon-Ortiz, O. Perales-Perez, P. M. Voyles, G. Gutierrez, and M. S. Tomar, Microelectronics Journal 40, 677-680 (2009).
  38. “Shear Transformation Zone Activation During Deformation in Bulk Metallic Glasses Characterized Using a New Indentation Creep Technique” J. B. Puthoff, H. B. Cao, J.E. Jakes, P. M. Voyles, and D. S. Stone, Mat. Res. Symp. Soc. Proc. 1152, TT10, (2008).
  39. “The Electron Microscopy Database: an Online Resource for Teaching and Learning Quantitative Transmission Electron Microscopy”, P. M. Voyles, Microscopy Today 17, 26 (2009).
  40. TEM Characterization of Microstructure and Chemistry of Magnesium Diboride Superconductor, Y. Zhu, dissertation, Materials Science, University of Wisconsin – Madison, 2008.
  41. Increased in-field critical current density in neutron irradiated MgB2 films” I. Pallecchi, V. Ferrando, C. Tarantini, M. Putti, C. Ferdeghini, Y. Zhu, P.M. Voyles, X.X. Xi, Supercon. Sci. Tech. 22, 015023 (2009).
  42. Model of Fluctuation Electron Microscopy for a Nanocrystal /Amorphous Composite”, F. Yi, W. G. Stratton, and P. M. Voyles, Microsc. Microanal. 14 (Suppl. 2), 914 (2008).
  43. Nanoscale Disorder in MgB2 Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition”, Y. Zhu, D. C. Larbalestier, A. Gurevich, X. X. Xi, and P. M. Voyles, Microsc. Microanal. 14 (Suppl. 2), 212 (2008).
  44. The Electron Microscopy Database: Example Data Sets for Teaching and Learning Quantitative TEM”, P. M. Voyles, Microsc. Microanal. 14 (Suppl. 2), 82 (2008).
  45. A phenomenological model of fluctuation electron microscopy for a nanocrystal / amorphous composite”, W. G. Stratton and P. M. Voyles, Ultramicroscopy 108, 727 (2008).
  46. Nanometer-scale structure of a Zr-based bulk metallic glass” Jinwoo Hwang, Hongbo Cao, and P. M. Voyles, in Bulk Metallic Glasses, Materials Research Society Proceeding Vol. 1048E, J. Schoers, R. Busch, N. Nishiyama, M. Li, eds. p. 1048-Z05-04, 2007.
  47. Change in Activation Volume for Plastic Deformation of Zr-based Bulk Metallic Glass following Annealing” J. B. Puthoff, D. S. Stone, H. Cao, and P. M. Voyles, in Bulk Metallic Glasses, Materials Research Society Proceeding Vol. 1048E, J. Schoers, R. Busch, N. Nishiyama, M. Li, eds. p. 1048-Z03-08 (2007).
  48. Tuning of magnetic properties in cobalt ferrite nanocrystals” Y. Cedeno-Mattei, O. Perales-Perez, W. G. Stratton, P. M. Voyles, M. S. Tomar, and F. Roman, J. Appl. Phys. 103, 07E512 (2008).
  49. Structural, optical and magnetic characterization of monodisperse Fe-doped ZnO nanocrystals”, A. Parra-Palomino, O. Perales-Perez, R. Singhal, Jinwoo Hwang, P. M. Voyles, and M. S. Tomar, J. Appl. Phys. 103, 07D121 (2008).
  50. Nanoscale grains, high irreversibility field, and large critical current density as a function of high energy ball milling time in C-doped magnesium diboride”, B. J. Senkowicz, R. J. Mungall, Y. Zhu, J. Jiang, P. M. Voyles, E. E. Hellstrom, and D. C. Larbalestier, Supercond. Sci. Technol. 21, 035009 (2008).
  51. Medium Range Order in High Aluminum Content Amorphous Alloys Measured by Fluctuation Electron Microscopy, W. G. Stratton, dissertation, Materials Science, University of Wisconsin – Madison, 2007.
  52. Quantifying nanoscale order in amorphous materials:  simulating fluctuation electron microscopy of amorphous silicon”, S. N. Bogle, P. M. Voyles, S. V. Khare, and J. R. Abelson, J. Phys. Cond. Mat. 19, 455204 (2007).
  53. Comparison of fluctuation electron microscopy theories and experimental methods” W. G. Stratton and P. M. Voyles, J. Phys. Cond. Mat. 19, 455203 (2007).
  54. Nanoscale disorder in high critical field, carbon-doped MgB2 hybrid physical-chemical vapor deposition thin films” Y. Zhu, D. C. Larbalestier, P. M. Voyles, A. V. Pogrebnyakov, X. X. Xi, J. M. Redwing, Appl. Phys. Lett. 91, 082513 (2007).
  55. Microstructures of SiC nanoparticle-doped MgB2/Fe tapes”, Y. Zhu, A. Matsumoto, B. J. Senkowicz, H. Kumakura, H. Kitaguchi, M. C. Jewell, E. E. Hellstrom, D. C. Larbalestier, P. M. Voyles, J. Appl. Phys 102, 013913 (2007).
  56. Evidence of ferromagnetism in Zn1-xMxO (M=Ni, Cu) nanocrystals for spintronics”, O. Perales-Perez, A. Parra-Palomino, R. Singhal, P. M. Voyles, Y. Zhu, W. Jia, M.S. Tomar, Nanotechnology 18, 315606 (2007).
  57. “Understanding the route to high critical current density in mechanically alloyed Mg(B1-xCx)2”, B. J. Senkowicz, A. Polyanskii, R. J. Mungall, Y. Zhu, J. E. Giencke, P. M. Voyles, C. B. Eom, E. E. Hellstrom, and D. C. Larbalestier, Supercon. Sci. Tech 20, 650 (2007).
  58. Evaluation of connectivity, flux pinning and upper critical field contributions to the critical current density of bulk MgB2”, A. Matsumoto, H. Kumakura, H. Kitaguchi, B. J. Senkowicz, M. C. Jewell, E. E. Hellstrom, Y. Zhu, P. M. Voyles, D. C. Larbalestier, Appl. Phys. Lett 86, 132508 (2006).
  59. Prospects for 3D, nanometer-resolution imaging by confocal STEM“, J. J. Einspahr and P. M. Voyles, Ultramicroscopy 106, 1041 (2006).
  60. Imaging single atoms with Z-contrast STEM in two and three dimensions“, P. M. Voyles, Microchimica Acta 155, 5 (2006).
  61. Computational thermodynamics to identify Zr-Ti-Ni-Cu-Al alloys with high glass forming ability”, H. Cao, D. Ma, K-C. Hsieh, L. Ding, W. G. Stratton, P. M. Voyles, Y. Pan, M. Cai, J. T. Dickinson, and Y. A. Chang, Acta Mat. 54, 2975 (2006) .
  62. Electron beam induced crystallization of amorphous Al-based alloys in the TEM“, W. G. Stratton, J. Hamann, J. H. Perepezko, and P. M. Voyles, Intermetallics 14, 1061 (2006).
  63. “Homogeneous Silica Formed by the Oxidation of Si(100) in Hyperthermal Atomic Oxygen”, M. Kisa, T. K. Minton, K. van Benthem, W. G. Stratton, X. Chen, L. Li, P. M. Voyles, S. J. Pennycook, and J. C. Yang, J. Spacecraft and Rockets 43, 431 (2006).
  64. “Turning cutting-edge research into secondary curriculum”, G. M. Zenner, W. C. Crone, J. A. Gimm, K. W. Lux, P. M. Voyles, N. L. Abbott, C. G. Carter, A. P. Cina, A. P. Comins, J. Tabora, P. Tuchscherer, T. Tuchscherer and P. J. Whitsett, J. Mat. Ed. 27, 91 (2005).
  65. Catalytic Oxidation of CO by Aqueous Polyoxometalates on Carbon-supported Gold Nanoparticles” Won Bae Kim, G. J. Rodriguez-Rivera, S. T. Evans, T. Voitl, J. J. Einspahr, P. M. Voyles and J. A. Dumesic, J. Catalysis 235, 327 (2005).
  66. Aluminum nanoscale order in amorphous Al92Sm8 measured by fluctuation electron microscopy“, W. G. Stratton, J. Hamann, J. H. Perepezko, P. M. Voyles, S. V. Khare, X. Mao, Appl. Phys. Lett. 86, 141910 (2005).
  67. “Increased Ordering in the Amorphous SiOx due to Hyperthermal Atomic Oxygen”, M. Kisa, W. G. Stratton, T. K. Minton, K. van Benthem, S. J. Pennycook, P. M. Voyles, X. Chen, L. Li and J. C. Yang, inMaterials for Space Applications, M. Chipara, D.L. Edwards, S. Phillips, R. Benson, eds. Mat. Res. Soc. Symp. Proc. 851, NN9.5 (2005).
  68. “Turning Cutting-Edge Research into Secondary Curriculum”, G. M. Zenner, W. C. Crone, J. A. Gimm, K. W. Lux, P. M. Voyles, N. L. Abbott, A. P.Cina, A. P. Comins, J. Tabora, P. Tuchscherer, T. Tuchscherer, P. J. Whitsett, C. G.Widstrand, in Communicating Materials Science—Education for the 21st Century, S. Baker, F. Goodchild, W. C. Crone, S. Rosevear eds. Mat. Res. Soc. Symp. Proc. 861E, PP3.3 (2004).
  69. “Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon,” S. V. Khare, S. M. Nakhmanson, P. M. Voyles, P. Keblinski, and J. R. Abelson, Appl. Phys. Lett. 85, 745 (2004).
  70. “Medium-Range Order in High Al-content Amorphous Alloys Measured by Fluctuation Electron Microscopy,” W. G. Stratton, P. M. Voyles, J. Hamann, J. H. Perepezko, Micros. Microanal. 10 suppl. 2, 788 (2004).
  71. “Evidence from Simulations for Orientational Medium Range Order in Fluctuation-Electron-Microscopy Observations of a-Si,” S. V. Khare, S. M. Nakhmanson, P. M. Voyles, P. Keblinski, and J. R. Abelson, Micros. Microanal. 10 suppl. 2, 820 (2004).
  72. “Medium-Range Order in High Al-content Amorphous Alloys Measured by Fluctuation Electron Microscopy”, W. G. Stratton, J. Hamann, J. H. Perepezko, P. M. Voyles, in Amorphous and Nanocrystalline Metals, R. Busch et al., eds., MRS Symposium Proceedings Vol. 806, MM9.4.1 (2004).
  73. “Depth-Dependent Imaging of Individual Dopant Atoms in Silicon” P. M. Voyles, D. A. Muller, and E. J. Kirkland, Microsc. Microanal., 10, 291 (2004).
  74. “Evidence for a new class of defects in highly n-type Si: donor-pair-vacancy-interstitials” P. M. Voyles, D. J. Chadi, P. H. Citrin, D. A. Muller, J. L. Grazul, P. A. Northrup, H.-J. L. Gossmann, Phys. Rev. Lett. 91, 122505 (2003).
  75. “A quantitative measure of medium-range order in amorphous materials from transmission electron micrographs” R. K Dash, P. M. Voyles, J. M. Gibson, M. M. J. Treacy, P. Keblinski, J. Phys: Cond. Mat.15, S2425 (2003).
  76. “Imaging Individual Atoms Inside Crystals with ADF-STEM” P. M. Voyles, J. L. Grazul, and D. A. Muller, Ultramicroscopy 96, 251 (2003).
  77. “Control of Medium-Range Order in Amorphous Silicon via Ion and Neutral Bombardment” J. E. Gerbi, P. M. Voyles, M. M. J. Treacy, J. M. Gibson, and J. R. Abelson, Appl. Phys. Lett. 82, 3665 (2003).
  78. “Medium-range Order in Amorphous Silicon Measured by Fluctuation Electron Microscopy” P. M. Voyles and J. R. Abelson, in Critical Review of Amorphous and Microcrystalline Materials and Solar Cells, H. Fritzsche and S. Guha, eds.; Solar Energy Materials and Solar Cells 78, 85 (2003). (invited review).
  79. “High-Performance Quantum-Dot Nanocomposites for Nonlinear-Optical and Optical-Gain Applications”M. A. Petruska, A. V. Malko, P. M. Voyles, and V. I. Klimov, Adv. Mat. 15, 610 (2003).
  80. “Dopant Mapping for the Nanotechnology Age”, M. R. Castell, D. A. Muller, and P. M. Voyles, Nature Materials 2, 129 (2003) (commentary).
  81. “Morphology and Crystallization Kinetics in HfO2 Thin Films Grown by Atomic Layer Deposition” M.-Y. Ho, H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, P. M. Voyles, D. A. Muller, M. Bude, W. H. Lin, A. See, M. E. Loomans, S. K. Lahiri, P. I. Räisänen, J. Appl. Phys. 93, 1477 (2003).
  82. “Fluctuation Microscopy in the STEM” P. M. Voyles and D. A. Muller, Ultramicroscopy 93, 147 (2002).
  83. Atomic-Scale Imaging of Individual Dopant Atoms and Clusters in Highly n-type Bulk Si” P. M. Voyles, D. A. Muller, J. Grazul, P. H. Citrin, and H.-J. Gossmann, Nature 416, 826 (2002). (Accompanying News and Views article, P. Peercy, Nature 416, 719 (2002)).
  84. “50 nm Vertical Replacement-Gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 Gate Dielectrics” J.M. Hergenrother et al. (40 authors, Voyles 34th), Int. Electron Device Meeting Tech. Digest, IEEE 2001, p. 3.1.1.
  85. “Control of Medium Range Order in Amorphous Silicon via Ion and Neutral Bombardment” J. E. Gerbi, P. M. Voyles, M. M. J. Treacy, J. M. Gibson, Wangchun C. Chen, B. J. Hauser, and J. R. Abelson, inAmorphous and Heterogeneous Silicon-Based Thin Films – 2001, J. B. Boyce et al., eds.; Mat. Res. Soc. Symp. Proc. 664, 2001, p. A27.3.1.
  86. “Fluctuation Microscopy Studies of Medium-Range Order Structures in Tetrahedral Amorphous Semiconductors” Xidong Chen, J. M. Gibson, J. Sullivan, T. Friedman, and P. M. Voyles, in Nano- and Microcrystalline Semiconductor Materials and Structures, P. M. Fauchet et al., eds.; Mat. Res. Soc. Symp. Proc. 638, (2001), p. F14.40.1.
  87. “Experimental Procedures and Data Analysis for Fluctuation Microcopy” P. M. Voyles, M. M. J. Treacy, J. M. Gibson, H-C. Jin, and J. R. Abelson, in Advances in Materials Problem Solving with the Electron Microscope, J. Bentley et al., eds.; Mat. Res. Soc. Symp. Proc. 589, (2001), p. 155.
  88. “Ion-implanted Amorphous Silicon Studied by Variable Coherence TEM” J.-Y. Cheng, J. M. Gibson, P. M. Voyles, M. M. J. Treacy, and D. C. Jacobson, in Advances in Materials Problem Solving with the Electron Microscope, J. Bentley et al., eds.; Mat. Res. Soc. Symp. Proc. 589, (2001), p. 247.
  89. “Absence of an Abrupt Phase Change from Polycrystalline to Amorphous in Silicon with Deposition Temperature” P. M. Voyles, J. E. Gerbi, M. M. J. Treacy, J. M. Gibson, and J. R. Abelson, Phys. Rev. Lett.86, 5514 (2001).
  90. “The Structure and Physical Properties of Paracrystalline Atomistic Models of Amorphous Silicon” P. M. Voyles, N. Zotov, S. M. Nakhmanson, D. A. Drabold, J. M. Gibson, M. M. J. Treacy, and P. J. Keblinski, J. Appl. Phys. 90, 4437 (2001).
  91. “Increased Medium-Range Order in Amorphous Silicon with Increased Substrate Temperature” P. M. Voyles, J. E. Gerbi, M. M. J. Treacy, J. M. Gibson, and J. R. Abelson, J. Non-Cryst. Solids 293-295, 45 (2001).
  92. “Realistic Models of Paracrystalline Silicon” S. M. Nakhmanson, P. M. Voyles, N. Mousseau, G.T. Barkema, and D. A. Drabold, Phys. Rev. B 63, 235207 (2001).
  93. “Models of Paracrystalline Silicon with a Defect-Free Bandgap” S. M. Nakhmanson, N. Mousseau, G. T. Barkema, P. M. Voyles, and D. A. Drabold, Int. J. Mod. Phys. B 15, 3253, (2001).
  94. “Comparative Fluctuation Microscopy Study of Medium-Range Order in Hydrogenated Amorphous Silicon Deposited by Various Methods” P. M. Voyles, M. M. J. Treacy, H-C. Jin, J. R. Abelson, J. M. Gibson, J. Yang, S. Guha, and R. S. Crandall, in Amorphous and Heterogeneous Silicon Thin Films 2000, H. M. Branz, et al. eds.; Mat. Res. Soc. Symp. Proc. 609, (2000) p. A2.4.1.
  95. “Topological Signatures of Medium Range Order in Amorphous Semiconductor Models” M. M. J. Treacy, P. M. Voyles, and J. M. Gibson, in Amorphous and Heterogeneous Silicon Thin Films 2000, H. M. Branz, et al. eds.; Mat. Res. Soc. Symp. Proc. 609, (2000) p. A2.5.1.
  96. “Thermodynamics of Paracrystalline Silicon” P. M. Voyles, M. M. J. Treacy, and J. M. Gibson, in New Methods, Mechanisms, and Models of Vapor Deposition, H. N. G. Wadley, G. Gilmer, and W. Barker, eds., Mat. Res. Soc. Symp. Proc. 616, (2000) p. 47.
  97. “Fluctuation Microscopy: A Probe of Atomic Correlations in Disordered Materials” P. M. Voyles, J. M. Gibson, and M. M. J. Treacy, J. Electron Microscopy 49, 259 (2000).
  98. “Atom Pair Persistence in Disordered Materials from Fluctuation Microscopy” J. M. Gibson, M. M. J. Treacy, and P. M. Voyles, Ultramicroscopy 83, 169 (2000).
  99. “Schläfli Cluster Topological Analysis of Medium Range Order in Paracrystalline Amorphous Semiconductor Models” M. M. J. Treacy, P. M. Voyles, and J. M. Gibson, J. Non-Cryst. Sol. 266, 150 (2000).
  100. “An Improved Method for Detecting Subtle Spatial Structures by Fluctuation Microscopy” Toshiya Iwai, P. M. Voyles, J. M. Gibson, and Yoshitsugu Oono, Phys. Rev. B 60, 191 (1999).
  101. “The Structure of Ion-Implanted Amorphous Silicon” J. M. Gibson, J-Y. Cheng, P. M. Voyles, M. M. J. Treacy, and D. C. Jacobson, in Microstructural Processes in Irradiated Materials, S. J. Zinkle, G. Lucas, and R. Ewing, eds.; Mat. Res. Soc. Symp. Proc. 540, (1999) p. 27.
  102. “Changes in the Medium Range Order of a-Si:H Thin Films Observed by Variable Coherence TEM” J. M. Gibson, M. M. J. Treacy, P. M. Voyles, H-C. Jin, and J. R. Abelson, in Amorphous and Microcrystalline Silicon Science and Technology 1998, R. Schropp et al., eds.; Mat. Res. Soc. Symp. Proc. 507, (1999) p. 837.
  103. “Enhanced Crystallinity of Microcrystalline Silicon Thin Films Using Deuterium in Reactive Magnetron Sputter Deposition at 230 °C” J. E. Gerbi, P. M. Voyles, J. M. Gibson, and J. R. Abelson, in Amorphous and Microcrystalline Silicon Science and Technology 1998, R. Schropp, et al. eds.; Mat. Res. Soc. Symp. Proc. 507, (1999) p. 429.
  104. “Structural disorder induced in hydrogenated amorphous silicon by light soaking” J. M. Gibson, M. M. J. Treacy, P. M. Voyles, H-C. Jin, and J. R. Abelson, Appl. Phys. Lett. 73, 3093 (1998).
  105. “Total reaction and 2n-removal cross sections of 20-60A MeV 4,6,8He, 6-9,11Li, and 10Be on Si” R. E. Warner, R. A. Patty, P. M. Voyles, et al., Phys. Rev. C 54, 1700 (1996).