Ashutosh Rath

5F6A6157Ashutosh obtained his MSc in physics from Utkal University, Orissa, India in 2005 before pursuing his PhD at Institute of Physics, Bhubaneswar, India, on “Dynamic and static TEM studies on the formation of Au-Si and Au-Ge nanostructures”. Following his PhD in 2012, he held the postdoctoral research associate position at Indian Institute of Science, Bangalore, India.  He joined  Paul Voyles group as postdoctoral research associate in December 2013.

Ashutosh’s CV

Research Interest

  1. Experiments with Transmission electron microscopy and Focused ion beam
  2. In-situ TEM studies of various nanostructures in different environments
  3. Growth of metal/metal oxide thin films
  4. Surface and interface physics
  5. Epitaxial growth of semiconductor nano wires using Molecular Beam Epitaxy

Key Publications

1.  Thermal resistance of transferred silicon nanomembrane interfaces. D. P. Schroeder, Z. Aksamija, A. Rath, P. M. Voyles, I. Knezevic, M. G. Lagally, and M. A. Eriksson.          Phys. Rev. Lett. , 115, 256101 (2015)

2.    A. Rath, J. K. dash, R. R. Juluri and P. V. Satyam ; Morphological variations in Au_{x}Si_{y} nanostructures under variable Pressure and annealing Conditions ;   Applied Physics A. 118 (3), 1079-1085 (2015).

3.   A. Rath, R. R. Juluri and P. V. Satyam; Real time nanoscale structural evaluation of gold structures on Si (100) surface using in-situ TEM.                                                                
J. Appl. Phys. 115, 184303 (2014).

4.   A. Rath et al ; A study of the initial stages of the growth of Au-assisted epitaxial Ge nano wires on clean Ge (100) Surface.                                                                             CrystEngComm 16 (12), 2486-2490 (2014).

5.   A. Rath, J. K. Dash, R. R. Juluri, A. Rosenauer, Marcos Schoewalter   and                    P.V. Satyam; Growth of Oriented Au Nanostructures: Role of Oxide at the Interface;         J. Appl. Phys. 111, 064322 (2012).

6.   A. Rath, J. K. Dash, R. R. Juluri, Marco Schowalter, Knut Mueller, A. Rosenauer and P.V. Satyam ; Nano scale phase separation in Au-Ge system on ultra clean Si(100)surfaces; J. Appl. Phys. 111, 104319 (2012).

7.   A. Rath, J. K. Dash, R. R. Juluri, A. Rosenauer and P.V. Satyam; Temperature dependent electron microscopy study of Au thin films on Si(100) with and without native oxide layer as barrier at the interface .                                                                                              J. Physics D: Applied Physics, 44, 115301 (2011).

Full list of publications