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Last updated: 7/9/08

A full bibliography of everything we have written. PDF format copies of the papers are hosted locally when the copyright transfer to the journal allows, and for accepted but unpublished preprints. In all cases, the copyright is retained by the respective journal. For other papers, we have provided a link to the online version hosted by the journal if one is available. You or your institution will need a subscription to the journal to access these links. We are happy to provide official reprints of any of these papers upon request to voyles@engr.wisc.edu.

  1. “A phenomenological model of fluctuation electron microscopy for a nanocrystal / amorphous composite”, W. G. Stratton and P. M. Voyles, Ultramicroscopy 108, 727 (2008).
  2. “Nanometer-scale structure of a Zr-based bulk metallic glass” Jinwoo Hwang, Hongbo Cao, and P. M. Voyles, in Bulk Metallic Glasses, Materials Research Society Proceeding Vol. 1048E, J. Schoers, R. Busch, N. Nishiyama, M. Li, eds. p. 1048-Z05-04, 2007.
  3. “Change in Activation Volume for Plastic Deformation of Zr-based Bulk Metallic Glass following Annealing” J. B. Puthoff, D. S. Stone, H. Cao, and P. M. Voyles, in Bulk Metallic Glasses, Materials Research Society Proceeding Vol. 1048E, J. Schoers, R. Busch, N. Nishiyama, M. Li, eds. p. 1048-Z03-08 (2007).
  4. “Tuning of magnetic properties in cobalt ferrite nanocrystals” Y. Cedeno-Mattei, O. Perales-Perez, W. G. Stratton, P. M. Voyles, M. S. Tomar, and F. Roman, J. Appl. Phys. 103, 07E512 (2008).
  5. “Structural, optical and magnetic characterization of monodisperse Fe-doped ZnO nanocrystals”, A. Parra-Palomino, O. Perales-Perez, R. Singhal, Jinwoo Hwang, P. M. Voyles, and M. S. Tomar, J. Appl. Phys. 103, 07D121 (2008).
  6. “Nanoscale grains, high irreversibility field, and large critical current density as a function of high energy ball milling time in C-doped magnesium diboride”, B. J. Senkowicz, R. J. Mungall, Y. Zhu, J. Jiang, P. M. Voyles, E. E. Hellstrom, and D. C. Larbalestier, Supercond. Sci. Technol. 21, 035009 (2008).
  7. Medium Range Order in High Aluminum Content Amorphous Alloys Measured by Fluctuation Electron Microscopy, W. G. Stratton, dissertation, Materials Science, University of Wisconsin - Madison, 2007.
  8. “Quantifying nanoscale order in amorphous materials:  simulating fluctuation electron microscopy of amorphous silicon”, S. N. Bogle, P. M. Voyles, S. V. Khare, and J. R. Abelson, J. Phys. Cond. Mat. 19, 455204 (2007).
  9. “Comparison of fluctuation electron microscopy theories and experimental methods” W. G. Stratton and P. M. Voyles, J. Phys. Cond. Mat. 19, 455203 (2007).
  10. “Nanoscale disorder in high critical field, carbon-doped MgB2 hybrid physical-chemical vapor deposition thin films” Y. Zhu, D. C. Larbalestier, P. M. Voyles, A. V. Pogrebnyakov, X. X. Xi, J. M. Redwing, Appl. Phys. Lett. 91, 082513 (2007).
  11. “Microstructures of SiC nanoparticle-doped MgB2/Fe tapes”, Y. Zhu, A. Matsumoto, B. J. Senkowicz, H. Kumakura, H. Kitaguchi, M. C. Jewell, E. E. Hellstrom, D. C. Larbalestier, P. M. Voyles, J. Appl. Phys 102, 013913 (2007).
  12. “Evidence of ferromagnetism in Zn1-xMxO (M=Ni, Cu) nanocrystals for spintronics”, O. Perales-Perez, A. Parra-Palomino, R. Singhal, P. M. Voyles, Y. Zhu, W. Jia, M.S. Tomar, Nanotechnology 18, 315606 (2007).
  13. “Understanding the route to high critical current density in mechanically alloyed Mg(B1-xCx)2”, B. J. Senkowicz, A. Polyanskii, R. J. Mungall, Y. Zhu, J. E. Giencke, P. M. Voyles, C. B. Eom, E. E. Hellstrom, and D. C. Larbalestier, Supercon. Sci. Tech 20, 650 (2007).
  14. “Evaluation of connectivity, flux pinning and upper critical field contributions to the critical current density of bulk MgB2”, A. Matsumoto, H. Kumakura, H. Kitaguchi, B. J. Senkowicz, M. C. Jewell, E. E. Hellstrom, Y. Zhu, P. M. Voyles, D. C. Larbalestier, Appl. Phys. Lett 86, 132508 (2006).
  15. "Prospects for 3D, nanometer-resolution imaging by confocal STEM", J. J. Einspahr and P. M. Voyles, Ultramicroscopy 106, 1041 (2006).
  16. "Imaging single atoms with Z-contrast STEM in two and three dimensions", P. M. Voyles, Microchimica Acta 155, 5 (2006).
  17. “Computational thermodynamics to identify Zr-Ti-Ni-Cu-Al alloys with high glass forming ability”, H. Cao, D. Ma, K-C. Hsieh, L. Ding, W. G. Stratton, P. M. Voyles, Y. Pan, M. Cai, J. T. Dickinson, and Y. A. Chang, Acta Mat. 54, 2975 (2006) .
  18. "Electron beam induced crystallization of amorphous Al-based alloys in the TEM", W. G. Stratton, J. Hamann, J. H. Perepezko, and P. M. Voyles, Intermetallics 14, 1061 (2006).
  19. “Homogeneous Silica Formed by the Oxidation of Si(100) in Hyperthermal Atomic Oxygen”, M. Kisa, T. K. Minton, K. van Benthem, W. G. Stratton, X. Chen, L. Li, P. M. Voyles, S. J. Pennycook, and J. C. Yang, J. Spacecraft and Rockets 43, 431 (2006).
  20. “Turning cutting-edge research into secondary curriculum”, G. M. Zenner, W. C. Crone, J. A. Gimm, K. W. Lux, P. M. Voyles, N. L. Abbott, C. G. Carter, A. P. Cina, A. P. Comins, J. Tabora, P. Tuchscherer, T. Tuchscherer and P. J. Whitsett, J. Mat. Ed. 27, 91 (2005).
  21. “Catalytic Oxidation of CO by Aqueous Polyoxometalates on Carbon-supported Gold Nanoparticles” Won Bae Kim, G. J. Rodriguez-Rivera, S. T. Evans, T. Voitl, J. J. Einspahr, P. M. Voyles and J. A. Dumesic, J. Catalysis 235, 327 (2005).
  22. "Aluminum nanoscale order in amorphous Al92Sm8 measured by fluctuation electron microscopy", W. G. Stratton, J. Hamann, J. H. Perepezko, P. M. Voyles, S. V. Khare, X. Mao, Appl. Phys. Lett. 86, 141910 (2005).
  23. “Increased Ordering in the Amorphous SiOx due to Hyperthermal Atomic Oxygen”, M. Kisa, W. G. Stratton, T. K. Minton, K. van Benthem, S. J. Pennycook, P. M. Voyles, X. Chen, L. Li and J. C. Yang, in Materials for Space Applications, M. Chipara, D.L. Edwards, S. Phillips, R. Benson, eds. Mat. Res. Soc. Symp. Proc. 851, NN9.5 (2005).
  24. “Turning Cutting-Edge Research into Secondary Curriculum”, G. M. Zenner, W. C. Crone, J. A. Gimm, K. W. Lux, P. M. Voyles, N. L. Abbott, A. P.Cina, A. P. Comins, J. Tabora, P. Tuchscherer, T. Tuchscherer, P. J. Whitsett, C. G.Widstrand, in Communicating Materials Science—Education for the 21st Century, S. Baker, F. Goodchild, W. C. Crone, S. Rosevear eds. Mat. Res. Soc. Symp. Proc. 861E, PP3.3 (2004).
  25. "Evidence from atomistic simulations of fluctuation electron microscopy for preferred local orientations in amorphous silicon," S. V. Khare, S. M. Nakhmanson, P. M. Voyles, P. Keblinski, and J. R. Abelson, Appl. Phys. Lett. 85, 745 (2004).
  26. "Medium-Range Order in High Al-content Amorphous Alloys Measured by Fluctuation Electron Microscopy," W. G. Stratton, P. M. Voyles, J. Hamann, J. H. Perepezko, Micros. Microanal. 10 suppl. 2, 788 (2004).
  27. "Evidence from Simulations for Orientational Medium Range Order in Fluctuation-Electron-Microscopy Observations of a-Si," S. V. Khare, S. M. Nakhmanson, P. M. Voyles, P. Keblinski, and J. R. Abelson, Micros. Microanal. 10 suppl. 2, 820 (2004).
  28. "Medium-Range Order in High Al-content Amorphous Alloys Measured by Fluctuation Electron Microscopy", W. G. Stratton, J. Hamann, J. H. Perepezko, P. M. Voyles, in Amorphous and Nanocrystalline Metals, R. Busch et al., eds., MRS Symposium Proceedings Vol. 806, MM9.4.1 (2004).
  29. "Depth-Dependent Imaging of Individual Dopant Atoms in Silicon" P. M. Voyles, D. A. Muller, and E. J. Kirkland, Microsc. Microanal., 10, 291 (2004).
  30. "Evidence for a new class of defects in highly n-type Si: donor-pair-vacancy-interstitials" P. M. Voyles, D. J. Chadi, P. H. Citrin, D. A. Muller, J. L. Grazul, P. A. Northrup, H.-J. L. Gossmann, Phys. Rev. Lett. 91, 122505 (2003).
  31. "A quantitative measure of medium-range order in amorphous materials from transmission electron micrographs" R. K Dash, P. M. Voyles, J. M. Gibson, M. M. J. Treacy, P. Keblinski, J. Phys: Cond. Mat. 15, S2425 (2003).
  32. "Imaging Individual Atoms Inside Crystals with ADF-STEM" P. M. Voyles, J. L. Grazul, and D. A. Muller, Ultramicroscopy 96, 251 (2003).
  33. "Control of Medium-Range Order in Amorphous Silicon via Ion and Neutral Bombardment" J. E. Gerbi, P. M. Voyles, M. M. J. Treacy, J. M. Gibson, and J. R. Abelson, Appl. Phys. Lett. 82, 3665 (2003).
  34. "Medium-range Order in Amorphous Silicon Measured by Fluctuation Electron Microscopy" P. M. Voyles and J. R. Abelson, in Critical Review of Amorphous and Microcrystalline Materials and Solar Cells, H. Fritzsche and S. Guha, eds.; Solar Energy Materials and Solar Cells 78, 85 (2003). (invited review).
  35. "High-Performance Quantum-Dot Nanocomposites for Nonlinear-Optical and Optical-Gain Applications" M. A. Petruska, A. V. Malko, P. M. Voyles, and V. I. Klimov, Adv. Mat. 15, 610 (2003).

  36. "Dopant Mapping for the Nanotechnology Age", M. R. Castell, D. A. Muller, and P. M. Voyles, Nature Materials 2, 129 (2003) (commentary).

  37. "Morphology and Crystallization Kinetics in HfO2 Thin Films Grown by Atomic Layer Deposition" M.-Y. Ho, H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, P. M. Voyles, D. A. Muller, M. Bude, W. H. Lin, A. See, M. E. Loomans, S. K. Lahiri, P. I. Räisänen, J. Appl. Phys. 93, 1477 (2003).

  38. "Fluctuation Microscopy in the STEM" P. M. Voyles and D. A. Muller, Ultramicroscopy 93, 147 (2002).

  39. "Atomic-Scale Imaging of Individual Dopant Atoms and Clusters in Highly n-type Bulk Si" P. M. Voyles, D. A. Muller, J. Grazul, P. H. Citrin, and H.-J. Gossmann, Nature 416, 826 (2002). (Accompanying News and Views article, P. Peercy, Nature 416, 719 (2002)).

  40. "50 nm Vertical Replacement-Gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 Gate Dielectrics" J.M. Hergenrother et al. (40 authors, Voyles 34th), Int. Electron Device Meeting Tech. Digest, IEEE 2001, p. 3.1.1.

  41. "Control of Medium Range Order in Amorphous Silicon via Ion and Neutral Bombardment" J. E. Gerbi, P. M. Voyles, M. M. J. Treacy, J. M. Gibson, Wangchun C. Chen, B. J. Hauser, and J. R. Abelson, in Amorphous and Heterogeneous Silicon-Based Thin Films - 2001, J. B. Boyce et al., eds.; Mat. Res. Soc. Symp. Proc. 664, 2001, p. A27.3.1.

  42. "Fluctuation Microscopy Studies of Medium-Range Order Structures in Tetrahedral Amorphous Semiconductors" Xidong Chen, J. M. Gibson, J. Sullivan, T. Friedman, and P. M. Voyles, in Nano- and Microcrystalline Semiconductor Materials and Structures, P. M. Fauchet et al., eds.; Mat. Res. Soc. Symp. Proc. 638, (2001), p. F14.40.1.

  43. "Experimental Procedures and Data Analysis for Fluctuation Microcopy" P. M. Voyles, M. M. J. Treacy, J. M. Gibson, H-C. Jin, and J. R. Abelson, in Advances in Materials Problem Solving with the Electron Microscope, J. Bentley et al., eds.; Mat. Res. Soc. Symp. Proc. 589, (2001), p. 155.

  44. "Ion-implanted Amorphous Silicon Studied by Variable Coherence TEM" J.-Y. Cheng, J. M. Gibson, P. M. Voyles, M. M. J. Treacy, and D. C. Jacobson, in Advances in Materials Problem Solving with the Electron Microscope, J. Bentley et al., eds.; Mat. Res. Soc. Symp. Proc. 589, (2001), p. 247.

  45. "Absence of an Abrupt Phase Change from Polycrystalline to Amorphous in Silicon with Deposition Temperature" P. M. Voyles, J. E. Gerbi, M. M. J. Treacy, J. M. Gibson, and J. R. Abelson, Phys. Rev. Lett. 86, 5514 (2001).

  46. "The Structure and Physical Properties of Paracrystalline Atomistic Models of Amorphous Silicon" P. M. Voyles, N. Zotov, S. M. Nakhmanson, D. A. Drabold, J. M. Gibson, M. M. J. Treacy, and P. J. Keblinski, J. Appl. Phys. 90, 4437 (2001).

  47. "Increased Medium-Range Order in Amorphous Silicon with Increased Substrate Temperature" P. M. Voyles, J. E. Gerbi, M. M. J. Treacy, J. M. Gibson, and J. R. Abelson, J. Non-Cryst. Solids 293-295, 45 (2001).

  48. "Realistic Models of Paracrystalline Silicon" S. M. Nakhmanson, P. M. Voyles, N. Mousseau, G.T. Barkema, and D. A. Drabold, Phys. Rev. B 63, 235207 (2001).

  49. "Models of Paracrystalline Silicon with a Defect-Free Bandgap" S. M. Nakhmanson, N. Mousseau, G. T. Barkema, P. M. Voyles, and D. A. Drabold, Int. J. Mod. Phys. B 15, 3253, (2001).

  50. "Comparative Fluctuation Microscopy Study of Medium-Range Order in Hydrogenated Amorphous Silicon Deposited by Various Methods" P. M. Voyles, M. M. J. Treacy, H-C. Jin, J. R. Abelson, J. M. Gibson, J. Yang, S. Guha, and R. S. Crandall, in Amorphous and Heterogeneous Silicon Thin Films 2000, H. M. Branz, et al. eds.; Mat. Res. Soc. Symp. Proc. 609, (2000) p. A2.4.1.

  51. "Topological Signatures of Medium Range Order in Amorphous Semiconductor Models" M. M. J. Treacy, P. M. Voyles, and J. M. Gibson, in Amorphous and Heterogeneous Silicon Thin Films 2000, H. M. Branz, et al. eds.; Mat. Res. Soc. Symp. Proc. 609, (2000) p. A2.5.1.

  52. "Thermodynamics of Paracrystalline Silicon" P. M. Voyles, M. M. J. Treacy, and J. M. Gibson, in New Methods, Mechanisms, and Models of Vapor Deposition, H. N. G. Wadley, G. Gilmer, and W. Barker, eds., Mat. Res. Soc. Symp. Proc. 616, (2000) p. 47.

  53. "Fluctuation Microscopy: A Probe of Atomic Correlations in Disordered Materials" P. M. Voyles, J. M. Gibson, and M. M. J. Treacy, J. Electron Microscopy 49, 259 (2000).

  54. "Atom Pair Persistence in Disordered Materials from Fluctuation Microscopy" J. M. Gibson, M. M. J. Treacy, and P. M. Voyles, Ultramicroscopy 83, 169 (2000).

  55. "Schläfli Cluster Topological Analysis of Medium Range Order in Paracrystalline Amorphous Semiconductor Models" M. M. J. Treacy, P. M. Voyles, and J. M. Gibson, J. Non-Cryst. Sol. 266, 150 (2000).

  56. "An Improved Method for Detecting Subtle Spatial Structures by Fluctuation Microscopy" Toshiya Iwai, P. M. Voyles, J. M. Gibson, and Yoshitsugu Oono, Phys. Rev. B 60, 191 (1999).

  57. "The Structure of Ion-Implanted Amorphous Silicon" J. M. Gibson, J-Y. Cheng, P. M. Voyles, M. M. J. Treacy, and D. C. Jacobson, in Microstructural Processes in Irradiated Materials, S. J. Zinkle, G. Lucas, and R. Ewing, eds.; Mat. Res. Soc. Symp. Proc. 540, (1999) p. 27.

  58. "Changes in the Medium Range Order of a-Si:H Thin Films Observed by Variable Coherence TEM" J. M. Gibson, M. M. J. Treacy, P. M. Voyles, H-C. Jin, and J. R. Abelson, in Amorphous and Microcrystalline Silicon Science and Technology 1998, R. Schropp et al., eds.; Mat. Res. Soc. Symp. Proc. 507, (1999) p. 837.

  59. "Enhanced Crystallinity of Microcrystalline Silicon Thin Films Using Deuterium in Reactive Magnetron Sputter Deposition at 230 °C" J. E. Gerbi, P. M. Voyles, J. M. Gibson, and J. R. Abelson, in Amorphous and Microcrystalline Silicon Science and Technology 1998, R. Schropp, et al. eds.; Mat. Res. Soc. Symp. Proc. 507, (1999) p. 429.

  60. "Structural disorder induced in hydrogenated amorphous silicon by light soaking" J. M. Gibson, M. M. J. Treacy, P. M. Voyles, H-C. Jin, and J. R. Abelson, Appl. Phys. Lett. 73, 3093 (1998).

  61. "Total reaction and 2n-removal cross sections of 20-60A MeV 4,6,8He, 6-9,11Li, and 10Be on Si" R. E. Warner, R. A. Patty, P. M. Voyles, et al., Phys. Rev. C 54, 1700 (1996).

Last modified 8/24/07
Paul Voyles, voyles@engr.wisc.edu